Properties of the Si-SiO2 Interfaces in MOS Structures with Nitrogen Doped Silicon
Ladislav Harmatha, Peter Ballo, Juraj Breza, Pavol Pisecny, Milan Tapajna
DOI:
Abstract
The article presents the results of capacitance measurements on MOS structures with a silicon substrate that wasdoped by nitrogen during the growth of the single crystal by Czochralski’s method. Attention is paid to the energydistribution of the trap density at the Si-SiO2 interface. The effect of the bond of nitrogen and oxygen brought about a slightincrease in the trap density with a typical distribution of energy maxima of the deep levels in the forbidden band of Si.