Voigt Size-Strain Broadening Of Pd Thin Films
Vladimir Zucha, Quido Jackuliak
DOI:
Abstract
Pd thin films were deposited onto Si (100) and glass/Pd/etching substrates by means of r.f. reactive sputtering under the same sputtering condition in order to appreciate the influence of substrate structure. The aim of this study was to appreciate the main X-ray diffraction line profile characteristic by the approximation method. As an approximation function was used the Voigt profile which was calculated by convolution of Gaussian and Cauchy profiles. As an instrumental standart was used ceramic Al2O3 from Nist. Results of size-strain analysis was obtained according to Langford method for one diffraction line and method suggested by Balzar and Ledbetter for two orders of the same diffraction line.