Electrodeposition of Cuprous Oxide on Boron Doped Diamond Electrodes
Miroslav Behul, Marian Vojs, Marian Marton, Pavol Michniak, Mario Kurniawan, Ralf Peipmann, Codruta Aurelia Vlaic, Andreas Bund, Robert Redhammer
DOI: 10.15598/aeee.v16i2.2778
Abstract
Nowadays, Cu_2O is very promising electrode material for photoelectrochemical applications. In this paper, we report on the controllable synthesis of Cu_2O single particles as well as compact layers on Boron Doped Diamond (BDD) electrodes using potentiostatic deposition in continuous and pulse mode. The BDD layers were prepared with different B/C ratios in the gas phase in order to investigate boron doping level influence on the Cu_2O properties. The effect of electrodeposition conditions such as deposition regime and pulse duration was investigated as well. The Cu_2O covered BDD electrodes were analysed by Scanning Electron Microscopy (SEM) and Raman spectroscopy. Improvement in the homogeneity of the electrodeposit and removal of clusters were achieved when the pulse potentiostatic regime was used. Using the same pulse electrodeposition parameters, we confirmed the possibility of controlling the deposition rate of Cu_2O by varying the BDD conductivity. Finally, we were able to scale the size of Cu_2O particles by changing the number of deposition pulses. The obtained results have shown a great potential of controlling the morphology, amount, size and distribution of Cu_2O films on BDD substrates by changing the boron doping level and electrodeposition conditions as well. The investigations reported herein allowed us to better understand the deposition mechanism of Cu_2O on BDD electrodes which could then be used for preparation of active layers for electrochemical applications and in optoelectronic devices such as solar cells and photodetectors.